[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-1] In-situ observation of solution growth of SiC crystal by X-ray transmission method

〇Takenobu Sakai¹, Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. Inst. of Innov. for Future Soci., 2.Toyota Motor Co., 3.Nagoya Univ. Inst. of Mate. and Sys. for Susta.)

Keywords:solution growth of SiC crystal, In-situ observation

Top seeded solution growth (TSSG) is greater technique der the possibility of realizing a high-quality SiC bulk crystal. However, it is necessary to do very large number of experimental trial and error, in order to achieve the stable crystal growth unchanged polycrystalline. It is difficult to know such as the state of contact between the solution and the seed crystal, because of the crystal growth at close to 2000℃ high-temperature range. We need to know the physical state of the field of crystal growth. Then, in this paper, we review our developed in-situ observation techniques and the study about the observation of the flow pattern and velocity of solution. Then, the velocity of solution were in the 0.4m/sec.