[15p-A21-1~13] Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

[15p-A21-2] Development of crystals with singularity by non-equilibrium time domain control

〇Hiroshi Fujioka^1,2, Kohei Ueno¹, Atsushi Kobayashi¹, Jitsuo Ohta^1,3 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL, 3.JST-PRESTO)

Keywords:GaN, singularity, nitride

Conventional semiconductor devices are entirely based on the physics of perfect crystals without defects. The defect structures themselves, however, offer a variety of exciting characteristics which can be possibly utilized for future electronics. In this presentation, we will discuss a preparation method of such crystals with abnormality by the use of pulsed plasma and its application for future electronics.