[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-11] Measurement of carbon concentration in silicon crystal (Ⅸ) from1E+16 to 1E+13

〇Naohisa Inoue^1,6, Keiko Inoue², Hisayoshi Ito³, Masumi Obuchi⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Toray Research C. Inc., 3.JAEA, 4.Nano Science Corp., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

Keywords:silicon crystal, carbon concentration measurement, infrared absorption

Carbon concentration measurement in silicon crystal is examined by infrared absorption, secondary ion mass spectrometry and charged particle activation analysis. Masurement technique down to 1E+14cm-3 is established. Synthetic reference specimen and suppression of phonon absorption interference are established for 1E+14cm-3 range. Solution for the problems for 1E+13 range for IR is suggested.