[16a-P6-1~9] 15.8 Crystal evaluation, impurities and crystal defects

[16a-P6-6] First principles analysis on formation energy of dopant in Ge/Si structure

〇JUN INAGAKI¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

Keywords:ab initio, surface structure, Ge/Si heterostructure