19:15 〜 19:30 ▼ [20p-H121-23] P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas 〇SANG Li-wen1、張 克雄1、角谷 正友1、廖 梅勇1、小出 康夫1 (1.物材機構)