[19p-H121-1~16] 15.4 III-V族窒化物結晶

▲ [19p-H121-3] Single Photon Emission from a GaN Interface Fluctuation Quantum Dot

〇(M2)LeRoux Florian¹、Holmes Mark^1,2、Arita Munetaka^1,2、Kang Gao¹、Kako Satoshi^1,2、Arakawa Yasuhiko^1,2 (1.IIS, Univ. of Tokyo、2.NanoQuine, Univ. of Tokyo)

キーワード：GaN Quantum Dot,Single Photon Source,Interface Fluctuation Quantum Dot

Single Photon Sources are now an extensive research subject thanks to their possible applications in secure communication and quantum information processing. Quantum Dots (QDs) have shown promising results for the realization of SPSs thanks to their remarkable physical properties. Among them, III-Nitride based QDs, with their large band offsets and wide range of bandgaps, allow operations up to room temperature at wavelengths ranging from the UV all the way to the IR. GaN interface fluctuation QDs were succesfully grown in recent years and showed exciting emission properties; narrow emission linewidths (down to 87µeV) with wavelengths located in the 330-350 nm region. In this study, we demonstrate single photon emission from this novel kind of QDs using a 266 nm Continuous Wave laser as excitation source.