2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体・有機・光・量子スピントロニクス

[19p-W241-2~12] 10.4 半導体・有機・光・量子スピントロニクス

2016年3月19日(土) 16:00 〜 19:00 W241 (西2・3号館)

手束 展規(東北大)

18:30 〜 18:45

[19p-W241-11] Observation of spin relaxation in GaAs/GaAsP strained-compensated superlattice

大木 俊介1、金 秀光2、淺川 将輝1、石川 友樹1、竹内 淳1 (1.早大先進理工、2.高エネ研)

キーワード:spin-polarized electron source,spin relazation,superlattice

In this research, we investigated the spin relaxation for GaAs/GaAsP strained-compensated superlattice (SL) by time-resolved spin-dependent pump amd probe reflectance measurements. The measured spin relaxation time of GaAs/GaAsP strain-compensated SL is 104 ps and slower than that of conventional GaAs MQW. This result indicates that GaAs/GaAsP strain-compensated SL is suitable for the highly spin-polarized electron source. I think this research has the important meaning that can contribute to elucidation of the most suitable structure as a spin polarized electron source.