[20a-W241-1~12] 10.3 GMR・TMR・磁気記録技術

▼ [20a-W241-11] Observation of tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge_1-xFe_x, MgO, and Fe

〇岡本 浩平¹、若林 勇希¹、芦原 渉¹、伴 芳祐¹、佐藤 彰一¹、田中 雅明¹、大矢 忍¹ (1.東大工)

キーワード：spintronics,ferromagnetic semiconductor,tunneling magnetoresistance

In this study, we epitaxially grew trilayer structure composed of IV-group ferromagnetic semiconductor Ge_1-xFe_x, MgO, and Fe, and successfully observed tunneling magnetoresistance. This result suggests that Ge_1-xFe_x has spin-polarized carrier, and could be applied as spin injector and detector for Si and Ge.