[20p-H103-1~21] 6.2 カーボン系薄膜

▲ [20p-H103-5] Reverse-Recovery in Diamond PIN diodes

〇(PC)Traore Aboulaye¹、Nakajima Akira¹、Makino Toshiharu^1,2、Kuwabara Daisuke^1,2,3、Kato Hiromitsu^1,2、Yamasaki Satoshi^1,2,3 (1.AIST、2.CREST/AIST、3.Univ. of Tsukuba)

キーワード：Diamond,PIN,Diode

Nowadays, diamond PIN diode is one of the most advanced and promising diamond-based power devices. Moreover, despite the significant technological progress to reduce their serial resistance as well as to increase their breakdown voltage, the charge-carrier transport mechanism in diamond PIN diode is not yet understood and worse, their dynamic features (turn-on and turn-off) still remain unexplored.
This work aimed at investigating the dynamic characteristics of diamond PIN diodes. A particular emphasis was placed on the turn-off in order to highlight the reverse recovery, which is related to the exhaustion of the charge-carrier plasma in the PIN diode base region (the conductivity modulation) during the turn-off. Thus, the bipolar behavior of diamond PIN diodes will be discussed by investigating the reverse recovery.