[20p-S423-1~19] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [20p-S423-19] Low Temperature Cat-Doping of Phosphorous Atoms into Crystalline Silicon through Ultrathin SiO₂ Layer

〇(P)Huynh ThiCamTu¹、Koyama Koichi¹、Terashima Shigeki¹、Matsumura Hideki¹ (1.JAIST)

キーワード：Cat-doping,crystalline silicon,ultra-thin silicon dioxide