Multilevel and analog memory function of resistive random access memory using Ta<sub>2</sub>O<sub>5</sub>

Reon Katsumura; Mika Gronroos; Atsushi Tsurumaki-Fukuchi; Masashi Arita; Yasuo Takahashi; Hideyuki Andoh; Takashi Morie

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Hisashi Shima(AIST), Yasuhisa Naitoh(AIST)

1:45 PM - 2:00 PM

△ [21p-H111-4] Multilevel and analog memory function of resistive random access memory using Ta₂O₅

〇Reon Katsumura¹, Mika Gronroos¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Hideyuki Andoh², Takashi Morie² (1.Hokkaido Univ., 2.Kyushu Inst. Tech)

Keywords:resistive random access memory,ReRAM

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Presentation information

[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-4] Multilevel and analog memory function of resistive random access memory using Ta2O5

△ [21p-H111-4] Multilevel and analog memory function of resistive random access memory using Ta₂O₅