The 63rd JSAP Spring Meeting, 2016

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-H121-1~17] 15.4 III-V-group nitride crystals

Mon. Mar 21, 2016 1:15 PM - 6:00 PM H121 (H)

Takao Miyajima(Meijo Univ.), Ryota Ishii(Kyoto Univ.), Shugo Nitta(Nagoya Univ.)

4:45 PM - 5:00 PM

△ [21p-H121-13] Study on Microstructure and Thermal Stability of Nitridated α-(AlGa)2O3

〇Akira Buma1, Nao Masuda1, Tsutomu Araki1, Yasushi Nanishi1, Masaya Oda2, Toshimi Hitora2 (1.Ritsumeikan Univ., 2.FLOSFIA)

Keywords:(AlGa)2O3,nitridation process,Transmission Electron Microscopy

We have proposed lattice matching substrate for AlGaN with high AlN molar fraction. Various Al composition of α-(AlGa)2O3 film can be grown by controlling composition. By nitridating α-(AlGa)2O3 which has suitable Al composition using nitrogen plasma, we think we can form AlGaN which is lattice matching for AlGaN with desired Al composition at α-(AlGa)2O3 surface. In this study, we report the result that characterization of microstructure of nitridated α-(AlGa)2O3 using TEM and thermal stability of α-(AlGa)2O3 with 30, 74 % AlN molar fraction.