[21p-P9-1~9] 15.5 IV族結晶，IV-IV族混晶

▲ [21p-P9-9] Formation of Large-grain polycrystalline Si Layer on Quartz by Al-induced Crystallization for Thin-Film Solar Cells

Suwardy Joko^1,2、Subramani Thiyagu²、〇Jevasuwan Wipakorn²、Toko Kaoru¹、Suemasu Takashi¹、Fukata Naoki^1,2 (1.Univ. of Tsukuba、2.NIMS)

キーワード：Aluminum-induced crystallization,Si

Aluminum-induced crystallization (AIC) have been intensively investigated as one of the alternative for low temperature post-crystallization Si. Several groups have already reported the fabrication of AIC-based Si thin film solar cells. However, the efficiency is much lower than that for conventional wafer Si solar cells. Therefore, the intrinsic crystalline qualities of AIC poly-Si such as grain size and crystal-orientations have to be optimized. In this study, we optimized the growth parameters of poly-Si seed layer formation on quartz substrates. Furthermore, solid phase epitaxy (SPE) on AIC seed layer was investigated to form thicker crystalline Si layer.