2016年第63回応用物理学会春季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.2 探索的材料物性・基礎物性

[21p-S223-1~17] 13.2 探索的材料物性・基礎物性

2016年3月21日(月) 13:30 〜 18:00 S223 (南2号館)

山口 憲司(原子力機構)、原 康祐(山梨大)

14:45 〜 15:00

[21p-S223-6] Photoresponse property of BaSi2 film grown on Si substrate by vacuum evaporation

〇(P)Trinh Cham Thi1、Nakagawa Yoshihiko1、Hara Kosuke O.2、Takabe Ryota3、Suemasu Takashi3、Usami Noritaka1 (1.Nagoya Univ、2.Univ. of Yamanashi、3.Univ. of Tsukuba)

キーワード:Barium silicide,Photoresponsivity,solar cell

We have succeeded in observation of photoresponsivity of BaSi2 film grown on Si by vacuum evaporation method, raising its promising application in high efficiency thin film solar cell. Photocurrent was observed at photon energies larger than 1.28 eV which is corresponding to band gap of evaporated BaSi2 film.