[5p-A202-1~18] 6.3 Oxide electronics

[5p-A202-13] Hydrogen gas sensor device utilizing resistive change of Ta₂O₅

Hisashi Shima¹, 〇Yasuhisa Naitoh¹, Zhiqiang Wei², Kazunari Homma², Satoru Fujii², Touru Sumiya¹, Hiroyuki Akinaga¹ (1.NeRI AIST, 2.PSCS)

Keywords:hydroge gas sensor, resistive random access memory, nanogap

The reliable sensing of the hydrogen gas encourages the use of hydrogen energy technology, which frees our society from the dependence on the conventional fossil fuel. We could achieve that highly sensitive hydrogen gas sensor device based on the Ta₂O₅ thin film and Pt electrode by applying forming operation to the device.