[5p-C18-8~21] 【CS.10】10.1 新物質・新機能創成（作製・評価技術）,10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術のコードシェアセッション

▼ [5p-C18-16] Influence of Bismuth insertion on voltage-induced interfacial Dzyaloshinskii-Moriya interaction

〇Risa Miyakaze¹、Kouhei Nawaoka¹、Minori Goto^1,3、Yoshishige Suzuki^1,2,3、Shinji Miwa^1,3 (1.Osaka Univ.、2.NIMS、3.CSRN)

キーワード：interfacial magnetic anisotropy, Dzyaloshinskii-Moriya interaction

Dzyaloshinskii-Moriya interaction (DMI) appears when the system has broken inversion symmetry with large spin-orbit interaction. DMI has been studied mainly in bulk materials, but it has been also reported in an ultrathin magnetic metal. We try to increase voltage modulation of interfacial DMI in metallic multilayers because voltage induction of the interfacial DMI is a possible method to break time reversal symmetry which cannot be done by voltage-controlled magnetic anisotropy. In this study, we inserted Bismuth, which has large spin-orbit interaction, at Fe/MgO interfaces and characterized voltage modulation of interfacial DMI.