11:15 〜 11:30
▼ [6a-A414-9] Three-dimensional imaging of the gallium doped zinc selenide by two-photon fluorescence microscopy
キーワード：Two-photon fluorescence, Semiconductor, Doping
In this paper, we present two-photon three-dimensional imaging of ion beam deposited gallium ion (Ga+) doping in zinc selenide (ZnSe) crystal. Doping of ZnSe with Ga+ leads to decrease of two-photon excitation. Measuring the photoluminescence intensity allows for mapping of doping concentration. Tightly focused light beam radiated by titanium-sapphire laser is used to excite two-photon fluorescence of selected point of ZnSe sample. Image of the doped volume is obtained by scanning the area of interest with piezoelectric stage. The excited photoluminescence intensity from a single point is registered as a pixel of the final image. The method was used to measure the depth and concentration of dopants deposited under changing acceleration voltage and ion dose.