[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-8] Electric Potential Distribution around GaInN/GaN Quantum Wells observed by High Sensitivity Phase-Shifting Electron Holography

〇KAZUO YAMAMOTO¹, Miko Matsumoto¹, Kiyotaka Nakano¹, Daiki Takasuka², Tetsuya Takeuchi², Satoshi Kamiyama², Tsukasa Hirayama¹ (1.JFCC, 2.Meijo Univ.)

Keywords:Electron Holography, Nitride Semiconductor, Quantum Well

To develop high performance GaN LED devices, it is important to evaluate the potential distribution of GaInN/GaN quantum well layers. Here, we succeeded in observing local potential distribution with higher spatial resolution and sensitivity by phase-shifting electron holography.