[6p-C17-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[6p-C17-1] Electrical properties of transparent amorphous oxide semiconductor Cd-Ga-Sn-O films

〇Hiroshi Yanagi¹, Yusuke Koyamaishi¹ (1.Univ. of Yamanashi)

Keywords:TAOS, High mobility

Transparent amorphous oxide semiconductors (TAOSs) such as amorphous In–Ga–Zn–O (a-IGZO) are among the most promising materials for thin-film transistors in next-generation flat-panel displays and other optoelectronic applications. A difficulty with amorphous oxide semiconductors (AOSs), including TAOSs, is that high mobility in amorphous films has only been demonstrated at high carrier density (≥10¹⁸ cm⁻³). In this study, we demonstrated high mobility (>10 cm²V^–1s^–1) TAOS with low carrier density (<10¹⁸ cm^–3) by fabricating amorphous cadmium–gallium–tin oxide (a-CGTO) films by RF magnetron sputtering with optimized water-vapor pressure during deposition: 57 cm²V^–1s^–1 at 1.9x10¹⁷ cm⁻³ and 36 cm²V^–1s^–1 at 5.3x10¹⁶ cm⁻³ have been achieved.