[7a-S22-1~11] 13.8 化合物及びパワー電子デバイス・プロセス技術

▲ [7a-S22-11] Study of Wet Chemical Treatments of Epitaxial GaN(0001) Surface

〇Lingshan Peng¹、Akio Ohta¹、Truyen Nguyen Xuan^1,2、Mitsuhisa Ikeda¹、Katsunori Makihara¹、Noriyuki Taoka²、Tesuo Narita^3,4、Kenji Itoh³、Daigo Kikuta³、Koji Shiozaki⁴、Tetsu Kachi⁴、Seiichi Miyazaki¹ (1.Grad. School of Eng., Nagoya Univ.、2.AIST GaN-OIL、3.Toyota Central R&D Labs.、4.IMaSS, Nagoya Univ.)

キーワード：GaN, Surface Cleaning

Surface cleaning of GaN is generally crucial from viewpoints of controllability and reproducibility in device fabrication processes involving device performance and it reliability. However, standard cleaning method of preparing the GaN surface has not been established well. In this work, to gain a better understanding of GaN surface cleaning, we have studied morphology changes by typical wet-chemical treatments using H₂O₂ and/or NH₄OH on epitaxially-grown GaN surface.