[8a-A301-1~11] 15.4 III-V-group nitride crystals

[8a-A301-9] MOVPE of N-face InN/GaN (000-1) double-hetero structures

〇Tetsuya Akasaka¹, Monika Schied¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:Indium nitride, MOVPE, double-hetero structure

N-face InN/GaN double-hetero (DH) structures were fabricated by metalorganic vapor phase epitaxy. By optimizing the growth temperature for the GaN capping layer, InN/GaN DH structures having both abrupt hetero-interfaces and strong band-edge photoluminescence have been successfully obtained.