13:30 〜 13:45
▼ [8p-A413-3] Transport and magnetic properties of n-type ferromagnetic semiconductor (In,Fe)As co-doped with Mn ; (In,Fe,Mn)As
キーワード：ferromagnetic semiconductor, spintronics, new material
Magnetism modulation via strain, quantum confinement and wavefunction engineering have been successfully done with the world's first n-type ferromagnetic semiconductor (In,Fe)As. In our study, we aimed to control the transport and magnetic properties of (In,Fe)As by Mn co-doping.
As a result, electron concentration decreased as Mn doping concentration increased and magnetism was also weakened by Mn doping and signed electron-induced ferromagnetism. Moreover, we obtained the intriguing result that the threshold of electron concentration in which ferromagnetism appears was one order of magnitude lower than the previous report.
As a result, electron concentration decreased as Mn doping concentration increased and magnetism was also weakened by Mn doping and signed electron-induced ferromagnetism. Moreover, we obtained the intriguing result that the threshold of electron concentration in which ferromagnetism appears was one order of magnitude lower than the previous report.