[8p-PA2-1~19] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [8p-PA2-2] Precise characterization of strained silicon nanomembrane edge-induced stress gradient in nanowire arrays via polarized Raman microscopy and imaging

〇(PC)Maria Balois¹、Lean Dasallas²、Oussama Moutanabbir³、Takuo Tanaka¹、Norihiko Hayazawa^1,4 (1.Photon Team - RIKEN、2.NIP - UP、3.Ecole P. Montreal、4.SISL - RIKEN)

キーワード：polarised Raman microscopy, strained silicon nanowires, nanomembrane

The effect of a nanomembrane edge on the stress distribution of ordered arrays of strained silicon (ε-Si) nanowires (NWs) having equal length but varying widths is investigated via polarized Raman spectroscopy. Blue-shifted Raman shift is observed for NWs near the nanomembrane edge compared to NWs far from the edge. Stress behavior along the NWs’ long-axis for a given width shows dependence on the relative position of the NWs from the nanomembrane. Stress relaxation is more evident for NWs at positions far from the nanomembrane, regardless of width. This study shows the potential use of a nanomembrane to modify the stress distribution in NWs.