10:15 〜 10:30
▲ [14a-F201-5] Effect of crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth
キーワード：Czochralski, silicon, impurity effect
Contamination of carbon (C) in Czochralski silicon crystal growth (CZ-Si) mainly originates from carbon monoxide (CO) generation, which is triggered during the heating and melting stages. It is essential to control the CO generation and C incorporation during the melting processes. The packed Si chunks experience the collapsing and volume shrinking during the melting process. Axial movement of the crucible is generally applied to adjust the level of Si feedstock. Melting process, as well as the species transport, must be modeled by transient global simulation according to the crucible movement and the Si volume change.
Axial movements of the crucible and the melting of Si feedstock in CZ-Si crystal growth result in the dynamic thermal and flow field, as well as the affected species transport. To study the effect of crucible movement control on the melting process and C contamination, two cases with static or dynamic crucible locations were investigated by the transient global simulation with dynamic mesh. The gap width between the gas-guide and the top surface of Si feedstock was kept constant for the dynamic crucible case. Heat and impurity transport and accumulation of C in Si feedstock were compared for the static and dynamic crucible cases. It is found that the dynamic control of crucible movement could affect the C contamination during the melting process of CZ-Si growth.
Axial movements of the crucible and the melting of Si feedstock in CZ-Si crystal growth result in the dynamic thermal and flow field, as well as the affected species transport. To study the effect of crucible movement control on the melting process and C contamination, two cases with static or dynamic crucible locations were investigated by the transient global simulation with dynamic mesh. The gap width between the gas-guide and the top surface of Si feedstock was kept constant for the dynamic crucible case. Heat and impurity transport and accumulation of C in Si feedstock were compared for the static and dynamic crucible cases. It is found that the dynamic control of crucible movement could affect the C contamination during the melting process of CZ-Si growth.