[14p-P4-1~78] 17 Nanocarbon Technology（Poster）

△ [14p-P4-14] Fabrication and photoluminescence characterization of carbon nanotube dual-gate devices

〇Akihiro Sasabe^1,2, Takushi Uda^1,2, Masahiro Yoshida², Akihiro Ishii^1,2, Yuichiro K. Kato² (1.Univ. of Tokyo, 2.RIKEN)

Keywords:carbon nanotubes, photoluminescence, field-effect devices

Photoluminescence from carbon nanotubes subjected to a DC gate voltage is quenched due to induced carrier accumulation [1], whereas applying a square-wave gate voltage to nanotubes causes luminescence recovery as a result of carriers being swept into contact electrodes [2]. Here we characterize photoluminescence of carbon nanotubes in dual-gate devices which allow for simultaneous and independent application of a DC gate voltage and a square-wave gate voltage. The devices are fabricated from silicon-on-insulator substrates, where trenches isolate two regions of the top silicon layer for use as the dual gates. We then perform thermal oxidation to form a gate dielectric, and air-suspended carbon nanotubes are grown over the trench between the dual gates. Photoluminescence measurements are used to identify the chirality of the as-grown individual nanotubes, and we examine the response of the nanotube emission to various combinations of the dual-gate voltages.
[1] S. Yasukochi, T. Murai, S. Moritsubo, T. Shimada, S. Chiashi, S. Maruyama, Y. K. Kato, Phys. Rev. B 84, 121409(R) (2011).
[2] M. Jiang, Y. Kumamoto, A. Ishii, M. Yoshida, T. Shimada, Y. K. Kato, Nature Commun. 6, 6335 (2015).