09:15 〜 09:30
▲ [15a-513-2] Ferroelectricity of Zr-doped HfO2 deposited by RF magnetron sputtering
キーワード:ferroelectrics, Zr-doped HfO2, RF magnetron sputtering
HfO2-based ferroelectric films have attracted much attention because of the compatibility with CMOS process and scalability. Most studies are focused on HfO2 ferroelectric films deposited by ALD or MOCVD. However, it has a problem of contamination caused by the precursor. In this study, ferroelectricity of Zr-doped HfO2 (HZO) deposited by RF magnetron sputtering was investigated.