[15a-P8-1~31] 12.1 作製・構造制御

[15a-P8-12] ミストデポジション法における最適吹付け角度の検討とシリコン酸化膜の成膜

〇平松 考樹¹、香取 重尊¹、織田 真也²、人羅 俊実² (1.津山高専、2.㈱フロスフィア)

キーワード：シリコン酸化膜

A silicon dioxide film is widely used as an insulating film for a gate insulating film of a MOS-FET and plays an important role in the electronic device industry. We have shown that SiO₂ thin films can be formed on glass substrates with ITO at deposition temperature of around 70 ℃ by mist CVD method using polysilazane and hydrogen peroxide solution. In this method, a thin film is formed on the surface of a substrate by flowing source materials gas on a substrate placed in a mold (referred to as a fine channel method). However, with the fine channel method, the size of the substrate depends on the size of the mold, and further it is difficult to form a film in a shape other than a flat plate. Therefore, in this research, in order to solve these problems, we studied film formation by a method (linear source method) of film formation by spraying source material from the nozzle tip. Using diluted polysilazane solution (solvent: butyl acetate) and hydrogen peroxide solution 6% (diluted with distilled water) as source material, 3.0 l / min of carrier gas (N₂), 2.0 l / min of dilution gas (N₂) , the stage was fixed under the conditions of a film forming temperature of 75 ° C and a film forming time of 15 min, and a silicon dioxide film was formed on the glass substrate. It was revealed that a thick film was obtained at the nozzle angle of 25 °.