[15a-P9-1~4] 13.7 Nano structures and quantum phenomena

[15a-P9-3] Well width dependence of carrier relaxation time of GaAs/AlGaAs single quantum well on the same substrate

〇Kizuku Yamada¹, Takuya Kamezaki¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Satoshi Shimomura², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Ehime Univ.)

Keywords:GaAs, carrier relaxation time, well width dependence

GaAs/AlGaAs quantum structures grown by MBE method have been used in several optical devices.In this research, GaAs/AlGaAs QW having respectively different thickness of the quantum well was grown on the same (100) GaAs substrate.We researched the well width dependence of carrier relaxation time by time-resolved PL measurement.