[15a-P9-1~4] 13.7 Nano structures and quantum phenomena

[15a-P9-4] Well width dependence of spin relaxation time of GaAs/AlGaAs single quantum well on the same substrate

〇Takuya Kamezaki¹, Kizuku Yamada¹, Shunsuke Ohki¹, Tomoki Ishikawa¹, Satoshi Shimomura², Atushi Tackeuchi¹ (1.Waseda Univ., 2.Ehime Univ.)

Keywords:spin, quantum well

The spin relaxation phenomenon in the quantum well is interesting in both basic physical properties and application.Elucidation of the mechanism of spin relaxation in Group III - V compound semiconductors is important for practical application of spintronic devices. It is expected to be applied to all - optical switching devices. We measured the well dependence of spin relaxation time in GaAs/Al_0.3Ga_0.7As single QW by time resolved pump and probe measurement.