[15p-F204-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[15p-F204-16] Polarization properties of single photon sources in channel region of 4H-SiC MOSFETs

〇Yuta Abe¹, Mitsuo Okamoto², Shinobu Onoda³, Takeshi Ohshima³, Moriyoshi Haruyama^3,4, Wataru Kada⁴, Osamu Hanaizumi⁴, Ryoji Kosugi², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.QST, 4.Gunma Univ.)

Keywords:single photon source, interface, defect

Single-photon sources (SPSs) are intensively studied using confocal microscope. Recently, bright SPSs have been found in SiC. We also found that good SPSs are formed at the SiC-SiO₂ interfaces of 4H-SiC MOSFETs; especially wet oxide C-face MOSFETs. But the origin of SPSs in SiC MOSFETs is still unclear. In this work, we examined polarization angle dependence of SPSs in 4H-SiC MOSFETs by using confocal microscope with half-wave retarders and found three types of SPSs which have different polarization properties. Then, we will discuss the microscopic structure of SPSs at the SiC-MOS interfaces.