[16a-501-1~11] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [16a-501-8] Saturation of spin drift velocity in Si spin MOSFET under high electric field

〇(M1)李 垂範¹、山下 尚人¹、安藤 裕一郎¹、三輪 真嗣²、鈴木 義茂²、小池 勇人³、白石 誠司¹ (1.京大工、2.阪大工、3.TDK)

キーワード：Spin injection, Si spintronics, Spin drift

Silicon (Si) is a promising candidate for spintronics and the information and recently a successful room temperature operation of the spin metal-oxide semiconductor field-effect transistor (MOSFET) in Si has been demonstrated in our group. In addition, the magnitude of spin signal can be enhanced using spin drift effect. However, spin transport under a high electric field has not been fully investigated, which can provide a significant material to discuss bias voltage dependence of the Si spin devices. In this study, we investigated the electric field dependence of spin drift velocity in non-degenerated Si lateral spin valves (LSVs).