[16p-304-1~13] Photovoltaic 4.0 －高効率・低コスト太陽光発電がもたらす次世代再生可能エネルギーシステム－

▲ [16p-304-3] Growth and device application of GaAsPN alloys on Si with lattice-matching conditions

〇若原 昭浩¹、山根 啓輔¹、佐藤 健人¹、後藤 聖也¹、高橋 賢二郎¹、関口 寛人¹、岡田 浩² (1.豊橋技科大院工、2.豊橋技科大EIIRIS)

キーワード：heteroepitaxy on Si, Dilute Nitride alloy, multi-junction solar cell

GaAsPN quaternary alloy has expected to be a material for Si substrate, since they can control the band gap in a wide range while lattice matching with Si. However, it is difficult to obtain high quality epitaxial layer with high nitrogen contents which is necessary for achieving suitable bang-gap for a tandem-cell based on Si bottom cell.
In this presentation, we summarize the key technology for improving the quality of GaAsPN heteroepitaxial layer, and report latest results of the GaAsPN pin diode on Si substrate fabricated by combining the dislocation free GaP / Si heteroepitaxy technology.