2017年第64回応用物理学会春季学術講演会

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13 半導体 » 13.2 探索的材料物性・基礎物性

[16p-B5-1~15] 13.2 探索的材料物性・基礎物性

2017年3月16日(木) 13:45 〜 17:45 B5 (B5)

末益 崇(筑波大)、山口 憲司(量研機構)

14:30 〜 14:45

[16p-B5-4] Photoluminescence Property of Si-based nanosheet bundles rooted on Si substrates

〇(D)Peiling Yuan1、Tamaki Ryo2、Sasaki Kenta3、Nakayama Makoto3、Saito Yuya3、Kusazaki Shinya3、Kumazawa Yuki3、Xiang Meng1、Ahsan Nazmul2、Okada Yoshitaka2、Tatsuoka Hirokazu3 (1.Grad. Sch. Sci. & Technol., Shizuoka Univ.、2.RCAST, The Univ. of Tokyo、3.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ.)

キーワード:Si-based nanosheet, Photoluminescence Property, CaSi2

Low-dimensional materials have attracted much interest due to their enhanced or modified optical, electronic and mechanical properties compared to those of bulk materials. A nanosheet bundle is also one of the potential structures for technological applications. The Si-based nanosheet bundles have been synthesized from CaSi2 microwalls on Si substrates. The structural properties of the bundles were characterized in the past. In this study, the photoluminescence (PL) property of the bundles is characterized, and the results are discussed in terms of quantum effect and surface states of the nanosheets.