[16p-P7-1~36] 13.9 Optical properties and light-emitting devices

[16p-P7-24] InN Nanoparticles Synthesized by Solvothermal Method

〇Junki Nagakubo¹, Tsutomu Nishihashi¹, Hirohiko Murakami¹ (1.ULVAC Inc.)

Keywords:Quantum Dot Nitride Phosphor Nanoparticle

Quantum dot EL light emitting devices have been studied in recent years, but Quantum Dot’s degradation over time has become a problem. Therefore, these are needed that quantum dots with excellent emission characteristics and withstand voltage breakdown. In this report, we have developed a method for producing InN nanoparticles which is difficult to decompose and generate In. No X - ray diffraction peak of In was confirmed from InN nanoparticles synthesized at 260 ° C for 10 minutes, and the particles show stable dispersion for more than 1 month in solution.