[17a-B5-1~12] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [17a-B5-1] Growth of GaAsPN p-i-n junctions on Si substrate with lattice matching condition toward multi-junction solar cells

〇Kento Sato¹, Keisuke Yamane¹, Masaya Goto¹, Kenjiroh Takahashi¹, Hiroto Sekiguchi¹, Hiroshi Okada^1,2, Akihiro Wakahara¹ (1.Toyohashi Tech., 2.Toyohashi Tech. EIIRIS.)

Keywords:Dilute nitrides, GaAsPN, Solar cell