Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)
Masataka Higashiwaki(NICT), Tetsuya Yamamoto(Kochi Univ. of Tech.), Mutsumi Kimura(Ryukoku Univ.)
△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above
1:30 PM - 1:45 PM
〇Ryo Wakabayashi1, Kohei Yoshimatsu1, Akira Ohtomo1,2 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.MCES)
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1:45 PM - 2:00 PM
〇(M1)Eitetsu Katagiri1, Kohei Sasaki2,3, Katsumi Kawasaki4, Jun Hirabayashi4, Akito Kuramata2,3, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)
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2:00 PM - 2:15 PM
〇(DC)Nao Takekawa1, Mayuko Sato1, Murakami Hisashi1, Kumagai Yoshinao1 (1.Tokyo Univ. of Agric. and Tech.)
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2:15 PM - 2:30 PM
〇Mayuko Sato1, Nao Takekawa1, Keita Konishi1, Hisashi Murakami1, Yoshinao Kumagai1 (1.Tokyo University of Agriculture and Technology)
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2:30 PM - 2:45 PM
〇(M1)Hiroyuki Morita1, Tomoaki Oga1, Nobuo Tsuchimine2, Satoru Kaneko3,1, Akifumi Matsuda1, Mamoru Yoshimoto1 (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)
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2:45 PM - 3:00 PM
〇Masanari Umemura1, Masaya Ichimura1 (1.Nagoya Inst. Tech.)
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3:15 PM - 3:30 PM
〇Kohei Shima1, Takumi Kasuya1,2, Kazunobu Kojima1,2, Shigefusa Chichibu1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)
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3:30 PM - 3:45 PM
〇(M2)Mian Wei1, Anup Sanchela2, Joonhyuk Lee3, Gowoon Kim3, Hyoungjeen Jeen3, Bin Feng4, Yuichi Ikuhara4, Haijun Cho1,2, Hiromichi Ohta1,2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ., 3.Pusan Natl Univ., 4.Univ. Tokyo)
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3:45 PM - 4:00 PM
〇(M1)Takumi Kasuya1,2, Kohei Shima1, Kazunobu Kojima1,2, Shigefusa Chichibu1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)
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4:00 PM - 4:15 PM
〇Takumi Hosaka1,2, Yoshihito Yamagata1,2, Takeo Ohsawa2, Sergey Grachev3, Herve Montigaud3, Takamasa Ishigaki1, Naoki Ohashi2 (1.Hosei Univ., 2.NIMS, 3.Saint-Gobain Recherche)
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4:15 PM - 4:30 PM
〇Takahiro Kondo1, Yuumi Kondo1, Yoshihiko Ninomiya1, Naoomi Yamada1 (1.Chubu Univ.)
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4:30 PM - 4:45 PM
〇(M2)Dianne Cabrejas Corsino1, Juan Paolo Bermundo1, Mami Fujii1, Kiyoshi Takahashi2, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.Nara Institute of Science and Technology, 2.Nippon Aluminum Alkyls, Ltd.)
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5:00 PM - 5:15 PM
〇Mamoru Furuta1, S G Mahadhi Aman1, Yusaku Magari1, Kenta Shimpo1, Daichi Koretomo1 (1.Kochi Univ. of Tech.)
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5:15 PM - 5:30 PM
〇(DC)Yusaku Magari1, Kenichiro Hamada1, Kentaro Masuda1, Mamoru Furuta1,2 (1.Kochi Univ. of Tech., 2.Center for Nanotech.)
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5:30 PM - 5:45 PM
〇Tsubasa Moritsuka1, Sumiko Fujisaki1, Hiroyuki Uchiyama2 (1.Hitachi Ltd., 2.Hitachi Metals Ltd.)
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5:45 PM - 6:00 PM
〇(D)Kazunori Kurishima1,2,3, Toshihide Nabatame2, Takashi Onaya1,2,3, Kazuhito Tsukagoshi2, Akihiko Ohi2, Naoki Ikeda2, Takahiro Nagata2, Atsushi Ogura1 (1.Meiji Univ., 2.NIMS, 3.JSPS DC)
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6:00 PM - 6:15 PM
〇(M1)Aimi Syairah Safaruddin1, Juan Paolo Bermundo1, Naofumi Yoshida2, Toshiaki Nonaka2, Mami Fujii1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.Nara Institute of Science and Technology, 2.Merck Performance Materials Ltd.)
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6:15 PM - 6:30 PM
〇(DC)Michael Paul Aquisay Jallorina1, Juan Paolo Bermundo1, Mami Fujii1, Yasuaki Ishikawa1, Yukiharu Uraoka1 (1.NAIST)
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