[18a-232-1~11] 3.13 Semiconductor optical devices

△ [18a-232-8] Over 100 °C Continuous-Wave Operation of InAs/GaAs Quantum Dot Laser on Si(001)

〇JINKWAN KWOEN¹, BONGYONG JANG¹, TAKEO KAGEYAMA¹, KATSUYUKI WATANABE¹, YASUHIKO ARAKAWA¹ (1.NanoQuine, U. Tokyo)

Keywords:quantum dot laser, molecular beam epitaxy, heteroepitaxy

Laser devices for silicon photonics are expected to be used in an integrated environment near CMOS devices. For this reason, quantum dot (QD) laser with excellent thermal properties has been considered a strong candidate for Si photonics light source. In the meantime, direct growth of QD lasers on Si (001) on-axis substrates is attracting attention due to the possibility of monolithic integration on a CMOS compatible wafer. In previous reports, 5 to 7 layer-stacked dot-in-well (DWELL) structure was used as the active layer and Be doping at QD capping layer was adopted for the high temperature operation. In this work, we report CW operation of an InAs/GaAs QD laser at the world's highest temperature of 101 °C among any III-V lasers grown on Si (001) on-axis substrates. This highest temperature operation was attained by growing of 8 layer-stacked structure without the use Be - doping in the QD capping layers.