[18p-212A-1~14] 3.15 シリコンフォトニクス

[18p-212A-1] [講演奨励賞受賞記念講演] Directly modulated quantum dot lasers epitaxially grown on Si

〇井上 大輔^1,2、Daehwan Jung²、Justin Norman²、Yating Wan²、西山 伸彦¹、荒井 滋久¹、Arthur C. Gossard²、John E. Bowers² (1.東工大未来研、2.ECE, UCSB)

キーワード：量子ドットレーザ、Si上直接成長、直接変調

Quantum dot (QD) lasers have been expected to surpass quantum-well or bulk lasers grown on Si thanks to its tolerance for threading dislocations. Although significant progress has been achieved, direct modulation properties of QD laser grown on Si have not been revealed. Here, we briefly review recent results and future prospects of QD lasers epitaxially grown on Si.