[18p-224B-1~11] 17.3 Layered materials

[18p-224B-2] Selective Oxidation of the Top-most Layer of bilayer WSe₂using Laser Irradiation

〇Hiroki Shioya¹, Kazuhito Tsukagoshi², Keiji Ueno³, Akira Oiwa⁴ (1.INSD, Osaka Univ., 2.NIMS, 3.Saitama Univ., 4.ISIR, Osaka Univ.)

Keywords:transition metal dichalcogenides, doping

There have been many efforts on the doping effects of transition metal dichalcogenides and those works are mostly based on the application of the gate voltage, using field effect transistor structures. In constrast, hole doping effects of WSe₂, whose top-most layer has selectively ozone-oxidized have reported recently and the doping techniques have become diversified. In our talk we will present our trials on the selective oxidation of top-most layer of WSe₂ using laser irradiation.