[18p-224B-1~11] 17.3 Layered materials

▼ [18p-224B-4] Generation of valley polarization and coherence in a monolayer MoS₂ probed by polarized photoluminescence measurement

〇(M1)Eito Asakura¹, Masaki Suzuki¹, Kousuke Nagashio², Makoto Kohda^1,3, Junsaku Nitta^1,3 (1.Tohoku Univ., 2.The Univ. of Tokyo, 3.CSRN)

Keywords:layered semiconductor, valleytronics, TMDC

Monolayer transition metal dichalcogenides (TMDCs) are attracting much attention for using valley degree of freedom in future quantum information technology since a superposition between K and K’ valleys is utilized as a quantum bit. In order to realize valley quantum state in TMDCs, generation and detection of valley polarization and its coherence are important steps. Here, we report the generation of valley polarization and coherence in monolayer MoS₂ probed polarized photoluminescence.