Quantification of Ga Adatom Surface Diffusion Length in GaP Growth by MBE

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 18, 2018 1:15 PM - 6:30 PM 234B (234-2)

Takeo Kageyama(QD Laser), Ryo Nakao(NTT), Itaru Kamiya(Toyota Technological Institute)

1:45 PM - 2:00 PM

〇Koki Shiota¹, keisuke Yamane¹, Jose Alberto Piedra-Lorenzana¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

Keywords:MBE growth, Diffusion length, GaP