[18p-PB1-1~73] 10 スピントロニクス・マグネティクス（ポスター）

△ [18p-PB1-32] Siへのスピン注入にむけたSi(100)/MgO構造における界面準位密度の評価

〇小池 剛央¹、大兼 幹彦¹、角田 匡清¹、安藤 康夫¹ (1.東北大院工)

キーワード：スピン注入

Spin transports between two ferromagnetic (FM) electrodes through semiconductor (SC) have been demonstrated by many groups using local/non-local Hanle and spin-valve measurements. However, the observed non-local spin signals were considerably smaller than predicted value from expected spin polarization of FM electrodes. The influence of interface trap states at the SC/Insulator interface on spin transport in real FM/Insulator/SC junction is not well understood. In this work, we prepared Si(100)/MgO/Ta MOS capacitors with RF magnetron sputtering and EB evaporation methods and investigated interface trap state density for the high efficient spin injection into silicon.