[19a-136-1~12] 13.9 化合物太陽電池

▲ [19a-136-11] Controlling carrier concentration of SnS by Sb doping

〇(M2)Ashenafi Abadi Elyas¹、Myo Than Htay^1,2、Yoshio Hashimoto^1,2、Kentaro Ito¹、Noritaka Momose³ (1.Shinshu Univ.、2.ICST, Shinshu Univ.、3.NIT, Nagano coll.)

キーワード：Thin -film solar cell, Sb doped SnS, carrier concentration

SnS is prepared by closed tube sulfurization of sputtered Sn precursor at 300 °C. Doping is done by thermal diffusion method where SnS is heated under Sb ambient at the temperature range of 400-550 °C. Structural and compositional analyses were done by XRD and EPMA, respectively. Electrical properties of the films such as resistivity, carrier concentration, and carrier mobility were characterized by Van der Pauw’s technique and AC Hall measurement. By vacuum annealing of as-grown SnS film, it is possible to reduce the secondary phase such as SnS₂. Formation of Sn defects at high Sb content was observed. The hole concentration of SnS could be controlled between 4.1×10¹⁵ cm^-3 to 7.65×10¹² cm^-3 by adjusting the Sb content.