[19a-136-1~12] 13.9 化合物太陽電池

△ [19a-136-5] Dependence of Electrical Contact between CuGaS₂ and Mo Thin Films on Sputtering Conditions

〇(B)Myeongok Kim¹、Nazmul Ahsan²、Zacharie Jehl Li Kao²、Hiroya Matsubayashi³、Kalainathan Sivaperuman⁴、Yoshitaka Okada^2,3 (1.Col. Arts and Sci. UTokyo、2.RCAST UTokyo、3.Elec. Eng. UTokyo、4.VIT University)

キーワード：Copper gallium disulfide, RF magnetron sputtering, Metal semiconductor interface

CuGaS₂ (CGS) thin film solar cell is in the same chalcopyrite compound family as CIGS solar cell that has reached efficiency of 22.9% by Solar Frontier in 2017. For the wide band gap of 2.48eV, its applications on intermediate band solar cell or tandem solar cell are expected to break the single-junction efficiency limit beyond 30% by absorbing wide spectrum of sunlight by multiple bandgaps. In this research, I studied mainly the electrical transport characteristics between sputtered molybdenum (Mo) metal electrode and CGS absorber layer. It has been found that the electrical transport varies depending on the substrate temperature during deposition and interface meterial.