[19a-233-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[19a-233-5] SiC Nanodots Formation in Poly-Si and Amorphous-Si Substrate using Hot C⁺ Ion Implantation

〇Rikito Kanazawa¹, Takashi Aoki¹, Toshiyuki Sameshima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ Agri. Tech.)

Keywords:semiconductor, SiC, quantum dot