2018年第79回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.4 半導体スピントロニクス・超伝導・強相関

[20p-131-9~13] 10.4 半導体スピントロニクス・超伝導・強相関

2018年9月20日(木) 15:30 〜 17:00 131 (131+132)

大矢 忍(東大)

16:45 〜 17:00

[20p-131-13] Observation of spin relaxation in Zn doped InP bulk with different doping concentrations

Masaya Takizawa1、Daisuke Tanaka1、Masayuki Iida1、Shima Tanigawa1、Atsushi Tackeuchi1 (1.Waseda Univ.)

キーワード:spin relaxation, Zn doped InP, pump and probe measurement

The spin relaxation of semiconductors has attracted considerable attention owing to the enormous potential of spin-based devices, the so-called “spintronic devices”.Particularly, InP materials have found important applications, such as high-electron mobility transistors or optoelectric devices. However, the effect of doping on spin relaxation has not yet been clarified. In this study, we have investigated the carrier relaxation and spin relaxation in Zn doped InP bulk with different doping concentrations by time-resolved pump and probe reflection measurement.