Mesa-structure GaN p-n diodes fabricated by photoelectrochemical (PEC) etching

Hiroshi Ohta; Naomi Asai; Fumimasa Horikiri; Yoshinobu Narita; Takehiro Yoshida; Tomoyoshi Mishima

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

3:45 PM - 4:00 PM

[20p-331-8] Mesa-structure GaN p-n diodes fabricated by photoelectrochemical (PEC) etching

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

Keywords:nitride semiconductor, photoelectrochemical etching, diode

Photoelectrochemical (PEC) etching method has been applied for the first time to fabricate mesa-structure vertical GaN p-n junction diodes. Smooth and damage-free surface have been obtained by the etching, which has enabled higher breakdown voltages with less dispersion among the diodes.