[21a-231C-1~11] 12.2 評価・基礎物性

▲ [21a-231C-9] CELIV measurement using MIS structure with MgF₂ as the insulating layer

〇Yuna Suzuki¹、Tomoyoshi Suenobu¹、Ken-ichi Nakayama¹ (1.Osaka Univ.)

キーワード：MIS-CELIV, charge carrier mobility

The MIS-CELIV method is a newly-developed approach where charge carrier mobilities are calculated via the transient current produced from the extraction of accumulated carriers. Due to the metal-insulator-semiconductor structure, it can not only measure carrier mobilities within thin organic films, but also distinguish the carrier types by using different device configurations. Thus far, MIS-CELIV has usually been measured using Si/SiO₂ substrates, however this limits the device structure as the placement of the insulator cannot be easily altered, like MgF₂. In this work, we utilized MgF₂ as the insulating layer of the MIS device, which enabled us to employ device configurations similar to a real OLED or OPV device with the use of indium tin oxide (ITO) substrates. As a potential alternative to SiO₂, the validity of charge carrier mobilities and transient responses obtained from MgF₂ devices are discussed.