2018年第79回応用物理学会秋季学術講演会

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13 半導体 » 13.3 絶縁膜技術

[21p-145-1~14] 13.3 絶縁膜技術

2018年9月21日(金) 13:15 〜 17:00 145 (レセプションホール)

山本 圭介(九大)、堀田 育志(兵庫県立大)

16:45 〜 17:00

[21p-145-14] Accurate measurement of the internal potential in two capacitors connected in series for studying Negative Capacitance effects

〇(P)Xiuyan Li1、Tomonori Nishimura1、Akira Toriumi1 (1.Univ. of Tokyo)

キーワード:Negative Capacitance, Internal potential

The channel potential amplification by a ferroelectric(FE) gate oxide, namely a negative capacitance (NC) effect, needs to be experimentally verified before showing steep subthreshold swing. An accurate measurement of the internal potential at the floating node in two capacitors connected in series may provide a more direct evidence. In this paper, we discuss how to measure the internal potential and its significance on the NC demonstration so far reported.