The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17p-E202-1~19] 15.4 III-V-group nitride crystals

Sat. Mar 17, 2018 1:15 PM - 6:30 PM E202 (57-202)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Yoshiki Saito(TS Opto)

4:15 PM - 4:30 PM

[17p-E202-12] Growth of relaxed thick InGaN layer and its evaluation II

〇Yuki Inomata1, Naoki Morishita2, Hideyuki Itakura1, Satoru Fujimoto2, Narihito Okada2, Kazuyuki Tadatomo2 (1.Department of Eng Yamaguchi Univ., 2.Grad. school of Sci Yamaguchi Univ)

Keywords:InGaN, MOVPE